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Magnetic tunnel junctions with lowMs free layers

✍ Scribed by Park, Sangjin ;Park, Wanjun ;Kim, Young Ju ;Kim, Taewan

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 104 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200304532

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ