Magnetic properties of Er and Er, O-doped GaAs grown by organometallic vapor phase epitaxy

✍ Scribed by Y. Morinaga; T. Edahiro; N. Fujimura; T. Ito; T. Koide; Y. Fujiwara; Y. Takeda

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 78 KB
• Volume: 10
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(01)00123-0

✦ Synopsis

Magnetic and magneto-transport behaviors in GaAs : Er and GaAs : Er, O ÿlms which showed strong luminescence at around 1:54 m due to intra-4f shell transitions of Er 3+ were investigated. Even at 2 K, the magnetizations at 5 T of the GaAs : Er and GaAs : Er, O ÿlms were about 0.6%, much less than that calculated using e ective moment of Er 3+ ion. Although the PL intensity was strongly related to the coordination around Er, the magnetization properties were independent of those atom conÿgurations. Moreover, the positive magneto-resistance (MR) of 12% was observed at 300 K in the GaAs : Er, O ÿlm with low carrier density. The change in MR ratio increased in proportion to the square of applied magnetic ÿeld and may be explained by the typical positive MR mechanism for hopping e ect by band shrinkage induced by impurity doping in semi-insulator semiconductor. E ects of Zn doping on the magnetization and magneto-transport behavior were also discussed.