Magnetic-field-induced transitions in InAs/Ga1−xAlxSb heterostructures
✍ Scribed by T.P. Smith III; H. Munekata; L.L. Chang; F.F. Fang; L. Esaki
- Book ID
- 118362506
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 593 KB
- Volume
- 196
- Category
- Article
- ISSN
- 0039-6028
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📜 SIMILAR VOLUMES
The interlayer interband state coupling and the interfacial composition effect in aperiodic InAs/GaSb (001) heterostructures are studied with the scattering theoretic Green's function technique, which can handle interlayer multi-subband interaction under the external bias. The current density calcul
A metal-insulator transition at zero magnetic ÿeld is observed in Ga [Al]As-heterostructures where a high density of self-assembled InAs-quantum dots is located in the region of the two-dimensional electron gas (2DEG). This transition occurs only in samples with high dot densities. In contrast to ot