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Field induced interlayer interband coupled states in aperiodic InAs/GaSb heterostructures

✍ Scribed by Gyungock Kim

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 163 KB
Volume: 21
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0204

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✦ Synopsis

The interlayer interband state coupling and the interfacial composition effect in aperiodic InAs/GaSb (001) heterostructures are studied with the scattering theoretic Green's function technique, which can handle interlayer multi-subband interaction under the external bias. The current density calculation shows that the interlayer interband coupled subbands enhance the peak current density by facilitating electron resonant tunneling. The calculated spectral local density of states of a heterostructure predicts that the GaAs interface shifts the energies of the quasibound states to lower energies than those of the InSb interface case, which agrees with experimental results.

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