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Magnetic field induced indirect gap in a modulation doped quantum well

✍ Scribed by D.M. Whittaker; T.A. Fisher; P.E. Simmonds; M.S. Skolnick; R.S. Smith; L.L. Taylor; S.J. Bass


Book ID
118365061
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
411 KB
Volume
263
Category
Article
ISSN
0039-6028

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The luminescence of n-type modulation doped GaAs/GaAlAs single quantum well structures has been used to probe the relaxation processes in the presence of quasi two dimensional electron gas under high magnetic fields. It was found that the magnetic field induced modulation of the Landau levels separa