Macropore Formation on Highly Doped n-Type Silicon

✍ Scribed by Christophersen, M. ;Carstensen, J. ;F�ll, H.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 146 KB
• Volume: 182
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200011)182:1<45::aid-pssa45>3.0.co;2-6

✦ Synopsis

Using specially ``designedº electrolytes, it is possible to obtain macropores even in highly doped n-type silicon (0.020±0.060 Wcm) without illumination. Based on predictions of the ªcurrent-burstmodelº [phys. stat. sol. (a) 182, 63 (2000), this issue], HF-containing electrolytes were systematically modified with strongly oxidizing components and evaluated with respect to their ability to produce macropores. Well developed macropores with depths up to 10 mm and pore diameters between 200 nm and 2 mm could be obtained in several cases. The macropore nucleation starts with a facetting of the surface on {111} planes.