Luminescence properties of YAl3(BO3)4substituted with Sc3+ions
β Scribed by Yoshida, Hisashi ;Fujikawa, Kazuhiro ;Toyoshima, Hiroaki ;Watanabe, Shinta ;Ogasawara, Kazuyoshi
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 276 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Luminescence properties of YAl~3~(BO~3~)~4~ (YAB) and Y~1βx~ Sc~x~ Al~3~(BO~3~)~4~ (YSAB) have been investigated under vacuum ultraviolet (VUV) light excitation. In YAB, two emission bands peaking at 3.2 and 3.9 eV are observed. On the other hand, there appear two emission bands at 3.2 eV and about 4.1 eV in YSAB. The origins of these emission bands are ascribed to two kinds of BO~3~ atomic groups. We suppose that the shift of the peak around 4 eV band is deeply related to the fact that one kind of BO~3~ atomic groups of YSAB are significantly distorted compared to that of YAB. (Β© 2006 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract The ground state of Gd^3+^ ions substituting for Y^3+^ in YAl~3~(BO~3~)~4~ single crystal has been studied by EPR method. Spin Hamiltonian parameters and their signs for Gd^3+^ ion in trigonal symmetry (__g__~__z__~β=β1.9893βΒ±β0.0002, __g__~__x__~β=β__g__~__y__~β=β1.9860βΒ±β0.0002; $b\_2
Single crystal of YAl 3 (BO 3 ) 4 (YAB) containing 1 at.% of Sm 3+ was grown by the top seeded high temperature solution method. Optical absorption, excitation and luminescence spectra as well as luminescence decay curves were recorded for this system at 10 K and at room temperature. Crystal field s