Luminescence in high purity In0.53Ga0.47As
β Scribed by A.F.S. Penna; Jagdeep Shah; A.E. DiGiovanni; A.G. Dentai
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 270 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0038-1098
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Diffusion experiments of Cd in VPE-InGaAs, lattice matched to InP, are reported. The closed ampoule technique used makes i t possible t o discuss the thermodynamics of the diffusion system consisting of the semiconductor samples, Cd,As, as compound source and additional In or GaAs powder t o prevent
Velocity-field curves for electrons in Gao.471no.53As are presented for fields upto lOOKV/cm. The velocity was calculated by the Monte Carlo method with a set of physical constants, selected from the experimental results and pseudopotential calculations. The calculated values agree closely with expe