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Luminescence from rod-like defects and hydrogen related centres in silicon

✍ Scribed by E.C. Lightowlers; L. Jeyanathan; A.N. Safonov; V. Higgs; G. Davies


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
697 KB
Volume
24
Category
Article
ISSN
0921-5107

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✍ A.N. Safonov; E.C. Lightowlers πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 311 KB

Photoluminescence measurements are reported which show that the centres responsible for the X-lines, which are created by radiation damage in silicon deliberately doped with hydrogen followed by annealing at 450Β°C, contain two, three or four hydrogen atoms at equivalent or inequivalent sites. The la