Structure and electrical properties of Ce-doped Ba(Zr x Ti 1Γx )O 3 (BCZT) thin films with the mole fraction of x ΒΌ 0:2 and the thickness of about 100 nm have been investigated. Ce-doped BZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a RF magnetron sputtering system. X-ray diffraction patt
β¦ LIBER β¦
Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence
β Scribed by Muhammad Maqbool; Hugh H. Richardson; Martin E. Kordesch
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 625 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0022-2461
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