Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

✍ Scribed by Yasuda, T.; Ma, Y.; Habermehl, S.; Lucovsky, G.

• Book ID: 111975607
• Publisher: American Institute of Physics
• Year: 1992
• Tongue: English
• Weight: 592 KB
• Volume: 60
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.106626