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Low wet etching rates of ZnO films prepared by sputtering of mixed ZnO and AlN powder targets

โœ Scribed by K. Kobayashi; Y. Kondo; Y. Tomita; Y. Maeda; S. Matsushima

Book ID
108289918
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
597 KB
Volume
516
Category
Article
ISSN
0040-6090

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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al