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Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

✍ Scribed by Dimitrakopoulos, C. D.


Book ID
121160596
Publisher
American Association for the Advancement of Science
Year
1999
Tongue
English
Weight
350 KB
Volume
283
Category
Article
ISSN
0036-8075

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High-dielectric-constant hafnium silicat
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## Abstract We prepared HfSiO__~x~__ on a heavily doped n‐type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N~2~:O~2~ as carrier gas. The HfSiO__~x~__ layer thus prepared was characterized by XPS, XRD, STEM and __C__ –__F__ measurements, indicating that the layer mainly consist