High-dielectric-constant hafnium silicat
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Yan, Hu ;Kagata, Tsubasa ;Arima, Susumu ;Sato, Hiroshi ;Okuzaki, Hidenori
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Article
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2008
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John Wiley and Sons
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English
β 478 KB
## Abstract We prepared HfSiO__~x~__ on a heavily doped nβtype silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N~2~:O~2~ as carrier gas. The HfSiO__~x~__ layer thus prepared was characterized by XPS, XRD, STEM and __C__ β__F__ measurements, indicating that the layer mainly consist