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Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

✍ Scribed by C. D. Dimitrakopoulos; I. Kymissis; S. Purushothaman; D. A. Neumayer; P. R. Duncombe; R. B. Laibowitz


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
178 KB
Volume
11
Category
Article
ISSN
0935-9648

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High-dielectric-constant hafnium silicat
✍ Yan, Hu ;Kagata, Tsubasa ;Arima, Susumu ;Sato, Hiroshi ;Okuzaki, Hidenori πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 478 KB

## Abstract We prepared HfSiO__~x~__ on a heavily doped n‐type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N~2~:O~2~ as carrier gas. The HfSiO__~x~__ layer thus prepared was characterized by XPS, XRD, STEM and __C__ –__F__ measurements, indicating that the layer mainly consist