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Low-voltage and high-field-effect mobility organic transistors with a polymer insulator

โœ Scribed by Y. Jang; D. H. Kim; Y. D. Park; J. H. Cho; M. Hwang; K. Cho


Book ID
125811502
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
423 KB
Volume
88
Category
Article
ISSN
0003-6951

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## Abstract We prepared HfSiO__~x~__ on a heavily doped nโ€type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N~2~:O~2~ as carrier gas. The HfSiO__~x~__ layer thus prepared was characterized by XPS, XRD, STEM and __C__ โ€“__F__ measurements, indicating that the layer mainly consist