Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

✍ Scribed by Rustagi, Subhash C.; Singh, N.; Lim, Y. F.; Zhang, G.; Wang, S.; Lo, G. Q.; Balasubramanian, N.; Kwong, D.-L.

• Book ID: 120572352
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 417 KB
• Volume: 28
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2007.904890