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Low-Temperature STM Images of Methyl-Terminated Si(111) Surfaces

โœ Scribed by Yu, Hongbin; Webb, Lauren J.; Ries, Ryan S.; Solares, Santiago D.; Goddard, William A.; Heath, James R.; Lewis, Nathan S.

Book ID
127339450
Publisher
American Chemical Society
Year
2005
Tongue
English
Weight
288 KB
Volume
109
Category
Article
ISSN
0022-3654

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In situ STM imaging of high temperature
In situ STM imaging of high temperature oxygen etching of Si(111)(7 ร— 7) surfaces
โœ A. Feltz; U. Memmert; R.J. Behm ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 665 KB

Gas phase etching of Si( 111) (7 x 7) surfaces, by reaction with O2 at zz 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 X 7) surface layer, which can act as nucleation centers for pit