In situ STM imaging of high temperature
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A. Feltz; U. Memmert; R.J. Behm
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Article
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1992
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Elsevier Science
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English
⚖ 665 KB
Gas phase etching of Si( 111) (7 x 7) surfaces, by reaction with O2 at zz 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 X 7) surface layer, which can act as nucleation centers for pit