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Low temperature preparation of piezoelectric thin films by ultraviolet-assisted rapid thermal processing

✍ Scribed by L. Pardo; R. Poyato; A. González; M.L. Calzada


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
259 KB
Volume
5
Category
Article
ISSN
1369-8001

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Tungsten silicide (WSi i ) films were prepared by rapid thermal annealing (RTA) of W films obtained by chemical vapor deposition (CVD) from carbonyl precursor-W(CO) 6 . The RTA process proceeds at 800-1400°C in different gas environments-argon, nitrogen, vacuum, etc. Investigations of the crystal ph