Low temperature processed hafnium oxide:
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L. Pereira; P. Barquinha; E. Fortunato; R. Martins
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Article
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2006
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Elsevier Science
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English
⚖ 236 KB
In this work hafnium oxide (HfO 2 ) was deposited by r.f. magnetron sputtering at room temperature and then annealed at 200 1C in forming gas (N 2 +H 2 ) and oxygen atmospheres, respectively for 2, 5 and 10 h. After 2 h annealing in forming gas an improvement in the interface properties occurs with