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Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition

✍ Scribed by Pan, N.; Carter, J.; Elliott, J.; Hendriks, H.; Brierley, S.; Hsieh, K. C.

Book ID: 121489663
Publisher: American Institute of Physics
Year: 1993
Tongue: English
Weight: 616 KB
Volume: 63
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.110248

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