Influence of Si(111) β3Γβ3 - R30 Β° -Sb s
β
Dmitry L. Goroshko; Konstantin N. Galkin; Nikolay G. Galkin
π
Article
π
2011
π
Elsevier
π
English
β 312 KB
Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20-500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase