Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition

✍ Scribed by D. Zhou; Hong Wang; Li-Xia Pang; Xi Yao; Xin-Guang Wu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 540 KB
• Volume: 29
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2008.08.024

✦ Synopsis

The influence of B 2 O 3 -CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO 4 ceramic have been investigated. The BiSbO 4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 • C as the addition amount of B 2 O 3 -CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity ε r saturated at 19-20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between -70 and -60 ppm/ • C at sintering temperature around 930 • C. Lowering sintering temperature of BiSbO 4 ceramics makes it possible for application in low temperature co-fired ceramic technology.