Effect of B2O3 addition on the sintering temperature and microwave dielectric properties of Zn2SiO4 ceramics
β Scribed by Jin-Seong Kim; Myung-Eun Song; Mi-Ri Joung; Jae-Hong Choi; Sahn Nahm; Sin-Il Gu; Jong-Hoo Paik; Byung-Hyun Choi
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 702 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0955-2219
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β¦ Synopsis
B 2 O 3 (25.0 mol%) was added to Zn 2-x SiO 4-x ceramics (0.0 β€ x β€ 0.5) to decrease the sintering temperature. Specimens with 0.0 β€ x β€ 0.3 sintered at 900 β’ C were well sintered with a high density due to the formation of a B 2 O 3 or B 2 O 3 -SiO 2 liquid phase. The Q Γ f value of the Zn 2 SiO 4 ceramic was relatively low, 32,000 GHz, most likely due to the presence of a ZnO second phase. A maximum Q Γ f value of 70,000 GHz was obtained for the specimens with x = 0.2-0.3, and their Ξ΅ r and Ο f values were approximately 6.0 and -21.9 ppm/ β’ C, respectively. Ag metal did not interact with the 25.0 mol% B 2 O 3 -added Zn 1.8 SiO 3.8 ceramic, indicating that Zn 2-x SiO 4-x ceramics containing B 2 O 3 are a good candidate materials for low temperature co-fired ceramic devices.
π SIMILAR VOLUMES
The influence of B 2 O 3 -CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO 4 ceramic have been investigated. The BiSbO 4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range f