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Low temperature deposition of nanocrystalline silicon carbide thin films

โœ Scribed by Kerdiles, S.; Berthelot, A.; Gourbilleau, F.; Rizk, R.


Book ID
120471027
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
409 KB
Volume
76
Category
Article
ISSN
0003-6951

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Silicon carbide film deposition at low t
โœ Hitoshi Habuka; Hiroshi Ohmori; Yusuke Ando ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 725 KB

A silicon carbide film is formed at low temperatures on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. A 0.2-ฮผm thick film, obtained at 1073 K and at a hydrogen chloride gas concentration greater