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Low-temperature characteristics of CdS/CuInSe2 diodes

✍ Scribed by R. Noufi; V. Ramanathan; R.J. Matson

Publisher
Elsevier Science
Year
1988
Weight
399 KB
Volume
24
Category
Article
ISSN
0379-6787

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✦ Synopsis

The current-voltage characteristics, relative spectral reponse and the electron-beam-induced current (EBIC) for CdS/CuInSe2 devices were measured in the 40-300 K temperature range. The results indicate that, at temperatures below 220 K, two space-charge regions are present and a reversal in the photocurrent, which shows spectral dependence, takes place under forward bias. The characterization of the device junction(s) by EBIC measurements is consistent with the spectral response.

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