𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Low resistivity n-type CdTe thin films doped with lead

✍ Scribed by N. Romeo; S. Tosi; S. Azzi

Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
112 KB
Volume
82
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

P-type CdTe thin films doped during grow
P-type CdTe thin films doped during growth by neutral high energy nitrogen atoms
✍ N. Romeo; A. Bosio; V. Canevari; C. Spaggiari; L. Zini πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science βš– 338 KB

P-type CdTe films with a resistivity of about 102 ~ cm were prepared by evaporating cadmium and tellurium from two separate crucibles onto heated glass substrates. P-type doping was obtained by directing to the substrate neutral high energy nitrogen atoms shot from an atomic gun during the CdTe film

Fabrication of low-resistive p-type Al–N
Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering
✍ Hsin-Chun Lu; Jo-Ling Lu; Chi-You Lai; Gwo-Mei Wu πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 244 KB

p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and st