## Abstract This letter presents a full band low power low noise amplifier design in 0.18βΞΌm complementary metalβoxideβsemiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wideβband operation. An
β¦ LIBER β¦
Low-power UWB LNA with common-gate and current-reuse techniques
β Scribed by Lee, J.-Y.; Park, H.-K.; Chang, H.-J.; Yun, T.-Y.
- Book ID
- 117812190
- Publisher
- The Institution of Engineering and Technology
- Year
- 2012
- Tongue
- English
- Weight
- 665 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1751-8725
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