Low-power PHEMT MMIC LNA for C-band applications
✍ Scribed by Jong Seol Yuk; Byoung Gun Choi; You Sang Lee; Chul Soon Park; Sukhoon Kang
- Book ID
- 102523181
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 187 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
We report on design and performance of a low‐power‐consuming two‐stage MMIC LNA using AlGaAs/GaAs pseudomorphic HEMTs with 0.25‐μm T‐gates. The MMIC LNA showing a noise figure of 2.55 dB with 17‐dB associated gain at 5.8 GHz consumes only 18 mW, which is the lowest value of power consumption ever reported to date from PHEMT MMIC LNAs around this frequency range, and is attributed to the optimization of the gate width and current, as well as the use of a circuit with a single current path. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48:253–255, 2006; Published Online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21320
📜 SIMILAR VOLUMES
The successful development of a new four-stage 1-W AlGaAs/InGaAs/GaAs PHEMT MMIC with a temperature-compensating GaAs feedback resistor is reported. It was found that we can signifi-cantly reduce the gain variation in the temperature range between Ϫ40 and 80°C from 7 dB to less than 3 dB by using th
## Abstract A fully matched Ka‐band wideband pseudomorphic high‐electron‐mobility transistor (PHEMT) 1‐W monolithic millimeter‐wave integrated circuit (MMIC) high‐power amplifier (HPA) without any external circuit is developed. The two‐stage HPAs are prepared on 2‐mil GaAs substrates with a small c
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