## Abstract This article describes a monolithic receiver front end comprising a low‐noise amplifier (LNA), a mixer, an intermediate‐frequency (IF) amplifier, and an IF filter implemented in a standard 0.18 μm CMOS technology.Current‐reused technique is used in the LNA to reduce power dissipation. C
Low power concurrent compact dual-band receiver front-end using 0.18-μm CMOS process
✍ Scribed by Kuo-Hua Cheng
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 291 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A fully monolithic dual‐band concurrent receiver front‐end chip for IEEE 802.11a/b/g applications is presented using 0.18‐μm CMOS 1P6M technology. This dual‐band receiver front‐end design uses sub‐harmonic mixer and only one multi‐modulus synthesizer. This low IF circuit design has the advantage of low‐cost and low‐power as comparing with the direct conversion architecture. For a 1.8 V power supply, the overall power consumptions is 66.1 mW. The overall receiver‐chain noise figures are 2.8 dB and 4.3 dB; P1db are −28dBm and −27dBm at 2.45 GHz and 5.25 GHz, and voltage gain is 28.5 dB and 28.1 dB, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1527–1530, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24399
📜 SIMILAR VOLUMES
## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and