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Low phase noise V-band push-push voltage controlled oscillator using 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology

✍ Scribed by Kao, H.-L.; Shih, S.P.; Yeh, C.S.

Book ID
117812174
Publisher
The Institution of Engineering and Technology
Year
2012
Tongue
English
Weight
325 KB
Volume
6
Category
Article
ISSN
1751-8725

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## Abstract A 60 GHz monolithic low‐noise amplifier (LNA) fabricated with 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistors is presented.Using a three‐stage cascaded topology and in‐stage transmission lines, the LNA is designed using 5 V power supply voltage. Measured results