A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology
✍ Scribed by Chih-Min Hu; Chung-Yu Hung; Chun-Hsueh Chu; Da-Chiang Chang; Ying-Zong Juang; Jeng Gong; Chih-Fang Huang; Chih-Min Chin
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 227 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 60 GHz monolithic low‐noise amplifier (LNA) fabricated with 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistors is presented.Using a three‐stage cascaded topology and in‐stage transmission lines, the LNA is designed using 5 V power supply voltage. Measured results of the LNA show the peak gain of 13.5 dB and the lowest noise figure of 5.15 dB around 61 GHz, and the 1 dB compression point (P~1dB~) of the LNA is −10 dBm. The LNA also demonstrates a complete design flow for millimeter‐wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:329–332, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26525