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Low-k dielectrics: a non-destructive characterization by infrared spectroscopic ellipsometry

✍ Scribed by P. Boher; C. Defranoux; M. Bucchia; C. Guillotin

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 773 KB
Volume: 70
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(03)00466-0

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✦ Synopsis

An infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has recently been developed at SOPRA. Its main feature is the ability to measure on a small spot (803200 mm) with a high signal / noise ratio. An original patented optical design suppresses back face reflection and ensures good-quality spectral measurements in the 21 600-7000 cm range. The excellent signal / noise ratio allows the performance of measurements in less than 30 s. Automation and real-time analysis are included to offer an operator-orientated metrology tool. Details of the instrument are presented, and its use for the characterization of different kinds of low-k dielectrics.

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