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Low-frequency noise characteristics of lightly-doped-drain MOSFETs

✍ Scribed by Sheng-Lyang Jang; Ping-Chen Chang


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
285 KB
Volume
36
Category
Article
ISSN
0038-1101

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Low-frequency noise behavlour m modulationdoped AlAs/GaAs superlattlce dual-dram magnetic sensors 1s presented for a vanety of device geometnes and operating contitlons The output noise power evaluated from measurement data for the vanous geometnes indicates that devices with a mmlmal dram separati