Low energy loss rf circuits on nanostructured porous silicon layers

✍ Scribed by Porcher, A. ;Remaki, B. ;Malhaire, C. ;Barbier, D.

• Book ID: 105364924
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 238 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200780130

✦ Synopsis

Abstract

We present a work dealing with the study of thick porous silicon (PS) as insulating substrate for radio frequency (rf) circuits. Planar LC resonant circuits of 2 mm x 2 mm were designed on 100 µm thick PS layers for uses in 10 MHz to 1 GHz frequency range. The influence of PS electrical conductivity on the energy loss is determined using an original method based on experimental data combined with numerical simulations. We have clearly shown the increase of PS conductivity with the frequency due to hopping transport mechanisms in disordered materials. The contribution of the porous substrate to the energy loss is dominant for conductivities higher than 10^–3^ S/cm. Finally, the insertion of a SiO~2~ layer between an oxidized porous substrate and the integrated micro‐coil is suggested to optimize the quality factor of integrated rf resonnant circuits. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)