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Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction

✍ Scribed by Crook, A.C.; Cockerill, T.M.; Forbes, D.V.; Herzinger, C.M.; DeTemple, T.A.; Coleman, J.J.


Book ID
119784298
Publisher
IEEE
Year
1994
Tongue
English
Weight
352 KB
Volume
6
Category
Article
ISSN
1041-1135

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Electro-optic low-voltage InGaAs/GaAs mu
✍ M. De Vittorio; M. Lomascolo; A. Passaseo; R. Cingolani; A Convertino; A Valenti πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 52 KB

We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic-inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF x /TiO x layers, fabricated