Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator with organic–inorganic distributed Bragg reflector
✍ Scribed by M. De Vittorio; M. Lomascolo; A. Passaseo; R. Cingolani; A Convertino; A Valentini
- Book ID
- 102618966
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 52 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic-inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF x /TiO x layers, fabricated by room-temperature ion beam sputtering on the rear side of the device. The reflectivity of the mirror approaches 98% in the infrared spectral region and is centered at the n = 1 exciton resonance of the MQW. ON-OFF driving reverse voltages of 0.5 and 1.8 V are measured at room temperature. In this range the static response of the device is linear so that it can be used for analog electro-optic modulation.