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Low band gap liquid-processed CZTSe solar cell with 10.1% efficiency

โœ Scribed by Bag, Santanu; Gunawan, Oki; Gokmen, Tayfun; Zhu, Yu; Todorov, Teodor K.; Mitzi, David B.

Book ID
111898144
Publisher
Royal Society of Chemistry
Year
2012
Tongue
English
Weight
391 KB
Volume
5
Category
Article
ISSN
1754-5692

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InA1As/InGaAs low-band-gap cell on InP f
InA1As/InGaAs low-band-gap cell on InP for high efficiency multi-structure solar cell system
โœ Yoshikazu Takeda; Mikio Wakai; Takayuki Ikeoku; Akio Sasaki ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 224 KB

InAIAs/InGaAs solar cells on InP for a low-band-gap cell have been fabricated. From theoretical simulation it is expected that the optimized InAIAs/InGaAs cell should have photovoltaic characteristic values of Jsc = 21.2 mA cm -2, Voc = 0.345 V, FF = 0.745 and r/= 4.02% at one sun AM0 without an AR-