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InA1As/InGaAs low-band-gap cell on InP for high efficiency multi-structure solar cell system

✍ Scribed by Yoshikazu Takeda; Mikio Wakai; Takayuki Ikeoku; Akio Sasaki

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 224 KB
Volume: 26
Category: Article
ISSN: 0927-0248
DOI: 10.1016/0927-0248(92)90129-d

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✦ Synopsis

InAIAs/InGaAs solar cells on InP for a low-band-gap cell have been fabricated. From theoretical simulation it is expected that the optimized InAIAs/InGaAs cell should have photovoltaic characteristic values of Jsc = 21.2 mA cm -2, Voc = 0.345 V, FF = 0.745 and r/= 4.02% at one sun AM0 without an AR-coating. The best performance achieved by experiment was Jsc = 22.0 mA cm -2, Voc = 0.320 V, FF = 0.695, and ~7 = 3.61% without an AR-coating. The uniformity of the characteristics was much improved utilizing the InGaAs cap layer for a low contact resistivity.

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