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Low-angle boundaries in silicon crystals

✍ Scribed by A. M. Eidenson; Doz. Dr. M. Ya. Dashevsky

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
716 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The main types of low‐angle boundaries (LAB) in single crystals with diamond‐type lattice are determined. The scheme of dislocation alignments formation in thermal stress field of growing crystal which allows to derive types of possible LAB and their distribution in crystal is proposed. On its basis the LAB formation in Si single crystals grown in different crystallographic directions is considered. It appears that LAB types and their distribution in the crystal depend on the character of the thermal stresses and on the crystal growth direction.

πŸ“œ SIMILAR VOLUMES

Low-angle boundary investigation in sili
Low-angle boundary investigation in silicon single crystals
✍ M. Ya. Dashevsky; A. M. Eidenson; N. I. Kazimirov; M. A. Khatsernov πŸ“‚ Article πŸ“… 1976 πŸ› John Wiley and Sons 🌐 English βš– 428 KB

## Abstract Low‐angle boundaries in Si single crystals grown from the melt in [111], [100], [112], [110], [118] and [115] directions were investigated by chemical etching, copper decoration technique and X‐ray topography. β€” LAB of four types were found in planes parallel to the crystal growth axes.