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Longitudinal and transverse development of electromagnetic showers using silicon detectors

โœ Scribed by F. Lemeilleur; F. Lamarche; C. Leroy; R. Paludetto; S. Pensotti; P.G. Rancoita; L. Vismara; A. Seidman


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
409 KB
Volume
279
Category
Article
ISSN
0168-9002

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Low-resistivity n-type silicon has been doped with gold and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on silicon with no gold and on gold-doped silicon and then characterised using current-voltage and capacitance-