Long-wavelength nitride lasers on GaAs

✍ Scribed by M. Pessa; C.S. Peng; T. Jouhti; E.-M. Pavelescu; W. Li; S. Karirinne; H. Liu; O. Okhotnikov

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 438 KB
• Volume: 69
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00297-1

✦ Synopsis

This paper reviews recent studies of structural and optical properties of long wavelength GaInNAs / GaAs quantum well semiconductors and the performance features of GaInNAs / GaAs vertical cavity surface emitting lasers (VCSELs) and edge-emitting lasers. The studies forecast that GaInNAs VCSELs and possibly edge-emitting lasers will become a compliment, or even a replacement, to the now dominant InP-based devices at 1.3-mm short-haul data transmission systems, but whether GaInNAs lasers in general will ever be competitive with the InP lasers at 1.4-1.6 mm is an entirely open issue today. The dilute nitride technology has still some distance to go in addressing its remaining concerns; yet, the authors believe that it is still the best bet to bring about the long-waited breakthrough in the component technology for optical fibre networks.