✦ LIBER ✦

Long term degradation of GaAs integrated circuits

✍ Scribed by A. Konttinen; J. Leino

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 718 KB
Volume: 32
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(92)90457-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The long-term stability of some integrat

The long-term stability of some integrated circuit resistors

✍ A.A. Dimba; B.K. Jones; I.G. Whyte 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 177 KB

Ion implantation of GaAs integrated circ

Ion implantation of GaAs integrated circuits

✍ A.W. Livingstone; P.A. Leigh; N. McIntyre; I.P. Hall; J.A. Bowie; P.J. Smith 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 835 KB

Long-term thermomechanical degradation o

Long-term thermomechanical degradation of molten polystyrene

✍ F.P. La Mantia; A. Valenza 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 261 KB

Short- and long-term degradation of poly

Short- and long-term degradation of polymer-based composites

✍ J.M. Kenny; L. Torre; L. Nicolais 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 601 KB

Long-term degradation of optical devices

Long-term degradation of optical devices on the Moon

✍ T.W. Murphy Jr.; E.G. Adelberger; J.B.R. Battat; C.D. Hoyle; R.J. McMillan; E.L. 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 433 KB

A new procedure for nonlinear statistica

A new procedure for nonlinear statistical model extraction of GaAs FET-integrated circuits

✍ Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; A 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 320 KB

A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been