๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Localized strain effects on photoluminescence of quantum dots induced by nanoprobe indentation

โœ Scribed by Kazunari Ozasa; Mizuo Maeda; Masahiko Hara; Masane Ohashi; Yuan-Hua Liang; Hiroki Kakoi; Yoshio Arai


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
826 KB
Volume
40
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Pressure effects on nanoprobe photolumin
โœ Kazunari Ozasa; Sintaro Nomura; Yoshinobu Aoyagi ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 842 KB

Nanoprobe near-field photoluminescence (PL) of InGaAs(P) dots with quasi-zero-dimensional (quasi-0D) confinement with various degrees of 0D/2D has been investigated by studying probe-induced pressure effects and probe-bias effects. Fine PL peaks of 0D confinement are superimposed on quantum well (QW

Effect of different strain reducing laye
โœ S.P. Ryu; N.K. Cho; J.Y. Lim; W.J. Choi; J.D. Song; J.I. Lee; Y.T. Lee; C.G. Par ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 449 KB

We investigated the effect of InGaAs and AlGaAs combination strain reducing layers on InAs quantum dots (QDs) grown by migration enhanced epitaxy. The samples were examined by cross-sectional transmission electron microscopy, low-temperature and power dependent photoluminescence (PL). We observed th