Nanoprobe near-field photoluminescence (PL) of InGaAs(P) dots with quasi-zero-dimensional (quasi-0D) confinement with various degrees of 0D/2D has been investigated by studying probe-induced pressure effects and probe-bias effects. Fine PL peaks of 0D confinement are superimposed on quantum well (QW
โฆ LIBER โฆ
Localized strain effects on photoluminescence of quantum dots induced by nanoprobe indentation
โ Scribed by Kazunari Ozasa; Mizuo Maeda; Masahiko Hara; Masane Ohashi; Yuan-Hua Liang; Hiroki Kakoi; Yoshio Arai
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 826 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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