Localized excitonic states in ZnS–ZnSe single quantum wells

✍ Scribed by V.V. Tishchenko; N.V. Bondar; A.V. Kovalenko; M.P. Halsall; P. Lilley

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 58 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0575

✦ Synopsis

We present low temperature photoluminescence spectra taken from an 11Å ZnSe quantum well in ZnS barriers. The samples are grown by the technique of photo-assisted vapour phase epitaxy (PAVPE) and the spectra show evidence for interface disorder. The observed dependences of the excitonic luminescence on excitation power and temperature are interpreted by a model involving excitonic localization below an exciton mobility edge. This mobility edge is measured for these samples to be 6 meV below the free exciton energy in the ideal quantum well.