Exciton relaxation dynamics in ultrathin CdSe/ZnSe single quantum wells
β Scribed by U. Neukirch; D. Weckendrup; W. Faschinger; P. Juza; H. Sitter
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 538 KB
- Volume
- 138
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
We present low temperature photoluminescence spectra taken from an 11Γ ZnSe quantum well in ZnS barriers. The samples are grown by the technique of photo-assisted vapour phase epitaxy (PAVPE) and the spectra show evidence for interface disorder. The observed dependences of the excitonic luminescence
The relaxation dynamics of hot excitons was studied in (Zn,Cd)Se/ZnSe quantum wells and quantum dots. A fast population of the radiative excitonic ground state occurs for an excitation excess energy corresponding to an integer number of optical phonon energies. This is indicated by a spectrally narr