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Local structural investigation of surfaces and interfaces by EELFS and EXFAS techniques

โœ Scribed by M. De Crescenzi


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
491 KB
Volume
28
Category
Article
ISSN
0304-3991

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Surface and interface of GaAsSI-GaAs str
โœ K Jezierski; P Sitarek; J Misiewicz; M Panek; B ลšciana; R Korbutowicz; M Tล‚aczaล‚ ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 406 KB

## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further