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Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

✍ Scribed by A. Gärtner; D. Schuh; A.W. Holleitner; J.P. Kotthaus


Book ID
104085227
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
395 KB
Volume
40
Category
Article
ISSN
1386-9477

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In order to model the very recent experimental data on the relaxation kinetics and photoluminescence (PL) dynamics of indirect excitons in high-quality GaAs/AlGaAs coupled quantum wells (QWs) at extremely low bath temperatures T b ¼ 0:05 K, we analyze, both analytically and numerically, the relevant