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Lithium-drifted, silicon radiation detectors for harsh radiation environments

✍ Scribed by J. Grant; C. Buttar; M. Brozel; A. Keffous; A. Cheriet; K. Bourenane; A. Bourenane; F. Kezzoula; H. Menari

Book ID
106398171
Publisher
Springer US
Year
2008
Tongue
English
Weight
238 KB
Volume
19
Category
Article
ISSN
0957-4522

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Wide bandgap semiconductor detectors for
Wide bandgap semiconductor detectors for harsh radiation environments
✍ J. Grant; W. Cunningham; A. Blue; V. O’Shea; J. Vaitkus; E. Gaubas; M. Rahman πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 378 KB

In this work two wide bandgap materials, silicon carbide (SiC) and gallium nitride (GaN), were investigated for their performance in harsh radiation environments. Schottky devices were fabricated on vanadium doped SiC (V-SiC), Okmetic semi insulating (SI) non-vanadium doped SiC, SI GaN grown by MOCV