0.35 mm packed and 0.20 mm isolated features have been printed with a positive acting top-surface imaging process. The process consists of a bilayer resist scheme, the top layer of which is a chemically amplified negative resist. The latter, after exposure and post-exposure bake, is silylated in the
โฆ LIBER โฆ
Liquid phase silylation of a bilayer resist system using blended deep-UV resists
โ Scribed by John Hargreaves
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 688 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0167-9317
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โฆ Synopsis
0.275 mm packed and 0.20 mm isolated features have been printed with a positive acting top-surface imaging process. The process consists of a bilayer resist scheme, the top layer of which is a chemically amplified negative resist whose resin is a blend of both novolak and poly(vinyl phenol). The latter, after exposure and post-exposure bake, is silylated in the liquid phase and the latent positive images are resolved using an oxygen plasma etch.
๐ SIMILAR VOLUMES
Liquid phase silylation of a bilayer res
โ
John Hargreaves
๐
Article
๐
1999
๐
Elsevier Science
๐
English
โ 616 KB